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Contributed paper in 1998 | Advanced Devices and Materials Engineering (ADME) Research Lab

Contributed paper in 1998

  1. Abdul Manaf Bin Hashim, Masahide Kimura, Kanji Yasui and Tadashi Akahane, “Plasma Parameter Control of the Spatially Afterglow Plasma for the Growth of 3C-SiC Epitaxial Films by Triode Plasma CVD”, 4th International Conference on Reactive Plasmas and 6th Symposium on Plasma Processing, October 19th ~ 23rd, 1998, Aston Wailea Resort, Maui, HAWAII. (Extended Abstract: No. EMP4.07 pp.91-92).
  2. Abdul Manaf Bin Hashim, Kunio Asada, Kanji Yasui and Tadashi Akahane, “ Epitaxial Growth of 3C-SiC on Si in a Low Electron Temperature using Dimethylsilane”, Research Conference on SiC and Related Wide-Band Gap Semiconductor, 1998. (Abstract: No.P-2 pp.36).
  3. Abdul Manaf Bin Hashim, Masahide Kimura, Kanji Yasui and Tadashi Akahane, “Epitaxial Growth of 3C-SiC Film under Low Temperatures in Afterglow Plasma Region using DMS(2)”, 59th Autumn Meeting of Japan Society of Applied Physics, 1998, HIROSHIMA. (Abstract: No.YK-9 pp.343).