2010

Selected list of publications of ADME i-Kohza members:
2010
  1. Mustafa, F.; Parimon, N.; Hashim, A.M., Rahman, S.F.A.; Osman, M.N.; Power Conversion EfficiencyCharacteristics of AlGaAs/GaAs Based Schottky Diode for On-Chip Rectenna Devices in Nanosystem, 2010 International Conference on Enabling Science and Nanotechnology (ESciNano), DOI:10.1109/ESCINANO.2010.5700975, 2010 (IEEExplore Indexed).
  2. Rahman, S.F.A.; Al-Obaidi, N.K.A.; Hashim, A.M.; Effects of Various Metal Contacts on Contact Resistance and Barrier Height of Metal/Graphene Interface, 2010 International Conference on Enabling Science and Nanotechnology (ESciNano), DOI:10.1109/ESCINANO.2010.5700995, 2010 (IEEExplore Indexed).
  3. Abidin, M.S.Z.; Wang Soo Jeat, Hashim, A.M.; Abdul Rahman, S.F.; Sharifabad, M.E.; Characterization of Liquid-Phase Sensor utilizing GaN-based Two-Terminal Device, 2010 International Conference on Enabling Science and Nanotechnology (ESciNano), DOI:10.1109/ ESCINANO.2010.5700972, 2010 (IEEExplore Indexed).
  4. Astuti, B.; Rusli, N.I.; Hashim, A.M; Othaman, Z.; Nafarizal, N.; Ali, N.K.; Safri, N.M.; Morphological and optical characteristics of porous silicon structure formed by electrochemical etching, 2010 International Conference on Enabling Science and Nanotechnology (ESciNano), DOI:10.1109/ESCINANO.2010.5700973, 2010 (IEEExplore Indexed).
  5. Nagata, K; Tamura, K; Suemitsu, M; Narita, Y; Ito, T; Endoh, T; Nakazawa, H; Hashim, A.M; Yasui, K.; Growth of GaN on SiC/Si substrates using AlN buffer layer under low III/V source gas ratio by hot-mesh CVD, 2010 International Conference on Enabling Science and Nanotechnology (ESciNano), DOI:10.1109/ESCINANO.2010.5701027, 2010 (IEEExplore Indexed).
  6. Yasui, K; Miura, H; Eto, J; Narita, Y; Hashim, A.M; Heteroepitaxial growth of SiC at low-temperatures for the application of a pressure sensor using hot-mesh CVD, 2010 International Conference on Enabling Science and Nanotechnology (ESciNano), DOI:10.1109/ESCINANO.2010.5701025, 2010 (IEEExplore Indexed).
  7. Chek, D.C.; Tan, M.L.P; Hashim, A.M; Arora, V.K.; Universal velocity-field characteristics for a nanowire of arbitrary degeneracy, 2010 International Conference on Enabling Science and Nanotechnology (ESciNano), DOI:10.1109/ESCINANO.2010.5700975, 2010 (IEEExplore Indexed).
  8. Chek, D.C.; Tan, M.L.P; Hashim, A.M; Arora, V.K.; Comparative study of ultimate saturation velocity in zigzag and chiral carbon nanotubes, 2010 International Conference on Enabling Science and Nanotechnology (ESciNano), DOI:10.1109/ESCINANO.2010.5701033, 2010 (IEEExplore Indexed).
  9. Riyadi, M.; Tan, M.L.P.; Hashim, A.M.; Arora, V.K.; Mobility diminution in a nano-MOSFET due to carrier injection from the ohmic contacts, 2010 International Conference on Enabling Science and Nanotechnology (ESciNano), DOI:10.1109/ESCINANO.2010.5701035, 2010 (IEEExplore Indexed).
  10. Norfarariyanti Parimon, Farahiyah Mustafa, Abdul Manaf Hashim, Shaharin Fadzli Abd Rahman, Abdul Rahim Abdul Rahman, Mohd Nizam Osman, Azlan Abdul Aziz and Md Roslan Hashim, Prediction of n-AlGaAs/GaAs Schottky diode properties for milliwatt range application, World Applied Sciences Journal, Vol. 9, pp. 43-51, 2010.
  11. Vijay K. Arora, Desmond C. Y. Chek, Michael L. P. Tan, and Abdul Manaf Hashim, Transition of equilibrium stochastic to unidirectional velocity vectors in a nanowire subjected to a towering electric field, Journal of Applied Physics, Vol. 108 (11), 114314, 2010 (ISI/SCOPUS Indexed).
  12. Rachana Vidhi, Michael L. P. Tan, Tanuj Saxena, Abdul Manaf Hashim and Vijay K. Arora, The Drift Response to a High-Electric-Field in Carbon Nanotubes, Current Nanoscience, vol. 6, pp. 492-495, 2010 (ISI/SCOPUS Indexed)
  13. Farahiyah Mustafa and Abdul Manaf Hashim, Properties of Electromagnetic Fields and Effective Permittivity Excited by Drifting Plasma Waves in Semiconductor-Insulator Interface Structure and Equivalent Transmission Line Technique for Multilayered Structure, Progress In Electromagnetics Research, Vol. 104, pp. 403-425, 2010 (ISI/SCOPUS Indexed).
  14. Farahiyah Mustafa, Norfarariyanti Parimon, Abdul Manaf Hashim, Shaharin Fadzli  Abd. Rahman, Abdul Rahim Abdul Rahman and Mohd Nizam Osman RF-DC Power Conversion of Schottky Diode Fabricated on AlGaAs/GaAs Heterostructure for On-Chip Rectenna Device Application in Nanosystems, Microsystem Technologies, Vol. 16, pp. 1713–1717, 2010 (ISI/SCOPUS Indexed).
  15. Mazuina Mohamad, Farahiyah Mustafa, Shaharin  Fadzli Abd Rahman, Mastura Shafinaz Zainal Abidin, Nihad K. Ali Al-Obadi, Abdul Manaf  Hashim, Azlan Abdul Aziz and Md Roslan Hashim, The Sensing Performance of Hydrogen Gas Sensor utilizing Undoped-AlGaN/GaN HEMT, Journal of Applied Sciences, Vol. 10, pp. 1797-1801, 2010 (SCOPUS Indexed).
  16. Mazuina Mohamad, Farahiyah Mustafa, Abdul Manaf Hashim, Shaharin Fadzli Abd Rahman, Azlan Abdul Aziz and Md Roslan Hashim, Fabrication of Pt-Circular Schottky Diode on Undoped AlGaN/GaN HEMT, Journal of Applied Sciences, Vol. 10 (19), pp. 2338-2342, 2010 (SCOPUS Indexed).
  17. Farahiyah Mustafa and Abdul Manaf Hashim, Plasma Wave Electronics: A Revival towards Solid-State Terahertz Electron Devices, Journal of Applied Sciences, Vol. 10 (14), pp. 1352-1368, 2010 (SCOPUS Indexed).
  18. Farahiyah Mustafa, Shaharin Fadzli  Abd Rahman, Abdul Manaf Hashim, Norfarariyanti Parimon, Abdul Rahim  Abdul Rahman and Mohd  Nizam Osman, RF-to-DC Direct Power Conversion of AlGaAs/GaAs Schottky Diode for On-Chip Rectenna Device Application in Nanosystems, Journal of Applied Sciences, Vol. 10(18), pp. 2041-2046, 2010 (SCOPUS Indexed).
  19. Mastura Shafinaz Zainal Abidin, Maneea Eizadi Sharifabad, Shaharin Fadzli Abd Rahman, Farahiyah Mustafa, Abdul Manaf Hashim, Abdul Rahim Abdul Rahman, Rabia Qindeel and Nurul Afzan Omar, Open-Gate Liquid-Phase Sensor Fabricated on Undoped-AlGaN/GaN HEMT Structure, Journal of Applied Sciences, Vol. 10 (18), pp. 2078-2085, 2010 (SCOPUS Indexed).
  20. A. M. Hashim, S. Kasai, H. Hasegawa and Q.I. Alias, Harmonic Responses in 2DEG AlGaAs/GaAs HEMT Devices due to Plasma Wave Interaction, American Institute of Physics Conf. Series, Vol. 1217, pp. 19 – 25, 2010 (ISI/SCOPUS Indexed).
  21. A. M. Hashim, H. H. Ping and C. Y. Pin, Characterization of MOSFET-like Carbon Nanotube Field-Effect-Transistor, American Institute of Physics Conf. Series, Vol. 1217, pp. 11 – 18, 2010 (ISI/SCOPUS Indexed).
  22. Farahiyah Mustafa and Abdul Manaf Hashim, Generalized 3D Transverse Magnetic Mode Method For Analysis of Interaction Between Drifting Plasma Waves in 2DEG-Structured Semiconductors and Electromagnetic Space Harmonic Waves, Progress In Electromagnetics Research, Vol. 102, pp. 315-335, 2010 (ISI/SCOPUS Indexed).
  23. Farahiyah Mustafa, Norfarariyanti Parimon, Abdul Manaf Hashim, and Shaharin Fadzli Abd. Rahman, Abdul Rahim Abd Rahman and Mohd Nizam Osman, Design, Fabrication and Characterization of a Schottky Diode on an AlGaAs/GaAs HEMT Structure for On-Chip RF Power Detection, Superlattices and Microstructures, Vol 47, pp 274 – 287, 2010 (ISI/SCOPUS Indexed).
  24. Mastura Shafinaz Zainal Abidin, Maneea Eizadi Sharifabad, Abdul Manaf Hashim, Shaharin Fadzli Abdul Rahman, Rabia Qindeel, Nurul Afzan Omar, Gateless-FET undoped AlGaN/GaN HEMT Structure for Liquid-Phase Sensor, IEEE International Conference on Semiconductor Electronics, Proceedings ICSE, art.no. 5549371, pp. 309-312, 2010 (IEEExplore Indexed).
  25. Mazuina Mohamad, Farahiyah Mustafa, Mastura Shafinaz Zainal Abidin, Shaharin Fadzli Abdul Rahman, Nihad K Ali Al-Obaidi, Abdul Manaf Hashim, Azlan Abdul Aziz and Md Roslan Hashim, The Sensing Performance of Hydrogen Gas Sensor Utilizing Undoped-AlGaN/GaN HEMT, IEEE International Conference on Semiconductor Electronics, Proceedings ICSE, art.no. 5549369, pp. 301-304, 2010 (IEEExplore Indexed).
  26. Norfarariyanti Parimon, Farahiyah Mustafa, Abdul Manaf Hashim, Shaharin Fadzli Abd Rahman, Abdul Rahim Abdul Rahman, Mohd Nizam Osman, Azlan Abdul Aziz and Md Roslan Hashim, Power Conversion Efficiency of Schottky Diode Fabricated on AlGaAs/GaAs Heterostructure, Journal of Materials Science and Engineering, Vol. 4, No. 6, pp. 1-6, 2010.
  27. Maneea Eizadi Sharifabad, Abdul Manaf Hashim, Shaharin Fadzli Abd Rahman, Mastura Shafinaz Zainal Abidin, Farahiyah Mustafa, Abdul Rahim Abdul Rahman, Rabia Qindeel and Nurul Afzan Omar, Open-Gate Undoped-AlGaN/GaN HEMT Structure for pH Sensing Application, Journal of Materials Science and Engineering, Vol. 4, No. 7, pp. 1-6, 2010.