Contributed paper in 1998

  1. Abdul Manaf Bin Hashim, Masahide Kimura, Kanji Yasui and Tadashi Akahane, “Plasma Parameter Control of the Spatially Afterglow Plasma for the Growth of 3C-SiC Epitaxial Films by Triode Plasma CVD”, 4th International Conference on Reactive Plasmas and 6th Symposium on Plasma Processing, October 19th ~ 23rd, 1998, Aston Wailea Resort, Maui, HAWAII. (Extended Abstract: No. EMP4.07 pp.91-92).
  2. Abdul Manaf Bin Hashim, Kunio Asada, Kanji Yasui and Tadashi Akahane, “ Epitaxial Growth of 3C-SiC on Si in a Low Electron Temperature using Dimethylsilane”, Research Conference on SiC and Related Wide-Band Gap Semiconductor, 1998. (Abstract: No.P-2 pp.36).
  3. Abdul Manaf Bin Hashim, Masahide Kimura, Kanji Yasui and Tadashi Akahane, “Epitaxial Growth of 3C-SiC Film under Low Temperatures in Afterglow Plasma Region using DMS(2)”, 59th Autumn Meeting of Japan Society of Applied Physics, 1998, HIROSHIMA. (Abstract: No.YK-9 pp.343).