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Academic

Siti Rahmah Binti Aid
B.Eng (Keio University),
Master of Science in Engineering  (Keio University),
PhD of Engineering in Integrated Design Engineering (Keio University)
contact-academic-siti-rahmah  Senior Lecturer
Electronic Systems Engineering
Tel: +603 2203 1293
Email: sitirahmah.aid@ic.utm.my
Research Interests
  • Fabrication Technology of Semiconductor Devices
  • Semiconductor Devices and Physics
  • Semiconductor Materials and Characterizations
Previous Positions
  • 2012–2013 Visiting Junior Research Fellow, Keio University, Japan
  • 2008–2010 Research Assistant of Global Center of Excellence Program , Keio University, Japan
  • 2005–2007 Engineer, NEC Electronics Corp., Sagamihara, Japan
Professional Membership
  • A member of Japanese Society of Applied Physics (JSAP)
Activities
  • Journal reviewer for Applied Surface Science (2011)
  • Chief Technician of The High-Pressure Gas
  • Chief Technician of Specified Chemical Substances and Tetraalkyl Lead etc.
  • Chief Technician of Organic Solvent
  • First Runner-up in Debate Competition of Majlis Sambutan Hari Kemerdekaan ke-45 & Ulangtahun ke-20 Dasar Pandang ke Timur
Awards
  • Best Paper Award of The 11th International Workshop on Junction Technology (IWJT), 2011
  • Mitsubishi Research Institute ASEAN Research Fellow Scholarship , 2011-2012
  • The Yamaoka Foundation Scholarship , 2010-2011
  • Tokyo Marine Kagami Memorial Foundation Scholarship, 2007-2010
Selected Publications International Journals

  • Formation of Ultra Shallow p+/n Junction in Silicon Using a Combination of Low-Temperature Solid Phase Epitaxy and Non-melt Double-Pulsed Green Laser Annealing”, Siti Rahmah Aid, Shuhei Hara, Yusuke Shigenaga, Takumi Fukaya,Yuki Tanaka, Satoru Matsumoto, Genshu Fuse, and Susumu Sakuragi, Japanese Journal of Applied Physics vol. 52, pp. 026501 (2013)
  • “Comparison of boron diffusion in silicon during shallow p+/n formation by non-melt excimer and green laser annealing”, S.R.Aid, S. Matsumoto, G. Fuse, and S. Sakuragi, Physica Status Solidi A 208 (12), pp. 2772-2777 (2011)
  • “Boron Diffusion Behavior During the Formation of Shallow p+/n Junction Using the Non-Melt Excimer Laser (NLA) Processes”, S.R. Aid, S. Matsumoto, and G. Fuse, Physica Status Solidi A vol. 208 (7), pp. 1646-1651 (2011)
  • “Si Self-Diffusivity using Isotopically Pure 30Si Epitaxial Layers”, S.R. Aid, T. Sakaguchi, K. Toyonaga, Y. Nakabayashi, S. Matumoto, M. Sakuraba, Y. Shimamune, Y. Hashiba, J. Murota, K. Wada, and T. Abe, Materials Science and Engineering B 114-115, pp. 330-333 (2004)

Proceedings of International Conference

  • “Characteristics of BF2, Ga and In Dopants in Si for Halo Implantation”, Y. Matsunaga, S. R. Binti Aid, S. Matsumoto, J. Borland, and M. Tanjyo, Extended Abstract of 11th International Workshop on Junction Technology 2011, Kyoto, pp. 74-77 (2013)
  • “Characteristics of BF2, Ga and In Implanted Si after FLA and RTA Annealing”, Bo Wo, Yusuke Matsunaga, Siti Rahmah Binti Aid, Satoru Matsumoto, John Borland, and Masayasu Tanjyo, Proceedings of the 19th International Conference on Ion Implantation Technology 2012, Valladolid, pp. 179-182 (2012)
  • “Formation of Shallow p+/n Junction in Silicon by Non-Melt Laser Annealing”, Siti Rahmah Aid, Satoru Matumoto, Genshu Fuse and Susumu Sakuragi, Extended Abstract of 11th International Workshop on Junction Technology 2011, Kyoto, pp. 132-135(2011)
  • “Comparison of Boron Diffusion in Silicon During the Formation of Shallow p+/n Junction with KrF and Green Laser Annealing”, S. R. Aid, S. Matsumoto, G. Fuse, and S. Sakuragi,  The 219th ECS Meeting in  Montreal, Electrochemical Society Transaction 35, pp. 165-172 (2011)
  • “Boron Diffusion Behavior during the Formation of Shallow p+/n Junction using the combination of Ge Pre-amorphization Implantation, Pre-Annealing RTA and Post-Annealing Non Melt Excimer Laser Processes”, Siti Rahmah Aid, Satoru Matsumoto, Toshiharu Suzuki, Genshu Fuse, Toshihiro Nakazawa, The 215th ECS Meeting in  San Francisco, Electrochemical Society Transactions 19, pp. 71-77 (2009)
  • “Silicon Self-Diffusion in Heavily B-Doped Si Using Highly Pure 30Si Epitaxial Layer”, Satoru Matsumoto, S. R. Aid, S. Seto, K. Toyonaga, and Y. Nakabayashi, The 209th ECS Meeting in Denver,  Electrochemical Society Transactions 2, pp. 287-297, (2006)
  • “Si Self-Diffusivity using Isotopically Pure 30Si Epitaxial Layers”, S.R. Aid, T. Sakaguchi, K. Toyonaga, Y. Nakabayashi, S. Matumoto, M. Sakuraba, Y. Shimamune, Y. Hashiba, J. Murota, K. Wada, and T. Abe, EMRS Spring Meeting 2004 in Strasbourg, Symposium B, Material Science Issues in Advanced CMOS Source-Drain Engineering – B/PII.10 (2004)
  • “Si self-diffusion in heavily B-doped epitaxial silicon”, K. Toyonaga, S. Rahamah Bt Aid, Y. Nakabayashi, S. Matsumoto, M. Sakuraba, Y. Shimada, A. Hashiba, and J. Murota, First International SiGe Technology and Device Meeting (ISTDM 2003), Kyoto, Jan 2003, pp. 235-236 (2003)